公开(公告)号：US20230246080A1

公开(公告)日：2023-08-03

申请号：US18297868

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsueh-Wen TSAU ,  Chun-I WU ,  Ziwei FANG ,  Huang-Lin CHAO ,  I-Ming CHANG ,  Chung-Liang CHENG ,  Chih-Cheng LIN

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L29/66

CPC classification number: H01L29/401 ,  H01L21/28247 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L29/785 ,  H01L29/4966 ,  H01L29/42392 ,  H01L29/66795 ,  H01L23/5226

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer includes an oxide material.

公开(公告)号：US20210286255A1

公开(公告)日：2021-09-16

申请号：US17335944

申请日：2021-06-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/44 ,  G03F1/84 ,  G03F1/42

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask outside of a pattern region of the photomask, and the at least one fiducial mark includes identifying information for the photomask. The method includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern. The method includes transferring the pattern from the photomask to a wafer.

公开(公告)号：US20220357661A1

公开(公告)日：2022-11-10

申请号：US17815041

申请日：2022-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F7/20

Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.

公开(公告)号：US20210280432A1

公开(公告)日：2021-09-09

申请号：US17327958

申请日：2021-05-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： I-Ming CHANG ,  Chih-Cheng LIN ,  Chi-Ying WU ,  Wei-Ming YOU ,  Ziwei FANG ,  Huang-Lin CHAO

IPC: H01L21/322 ,  H01L21/28 ,  H01L29/78 ,  H01L21/762 ,  H01L29/165 ,  H01L29/66

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The semiconductor device structure includes a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion. The metal gate stack includes a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and the gate dielectric layer includes fluorine. A first part of the isolation layer is not covered by the metal gate stack, the first part includes fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.

公开(公告)号：US20240094625A1

公开(公告)日：2024-03-21

申请号：US18522942

申请日：2023-11-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/44 ,  G03F1/42 ,  G03F1/84

CPC classification number: G03F1/44 ,  G03F1/42 ,  G03F1/84 ,  G03F1/54

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

公开(公告)号：US20210305376A1

公开(公告)日：2021-09-30

申请号：US17345382

申请日：2021-06-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsueh-Wen TSAU ,  Chun-I WU ,  Ziwei FANG ,  Huang-Lin CHAO ,  I-Ming CHANG ,  Chung-Liang CHENG ,  Chih-Cheng LIN

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L29/66

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate. The silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer is thinner than the second metal-containing layer.

公开(公告)号：US20180364560A1

公开(公告)日：2018-12-20

申请号：US15626643

申请日：2017-06-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Chih-Cheng LIN ,  Ping-Hsun LIN

IPC: G03F1/44 ,  G03F1/54 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/20 ,  G03F1/22 ,  H01L21/027

CPC classification number: G03F1/44 ,  G03F1/22 ,  G03F1/54 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/2004 ,  H01L21/0274

Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.

公开(公告)号：US20240395564A1

公开(公告)日：2024-11-28

申请号：US18789983

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： I-Ming CHANG ,  Chih-Cheng LIN ,  Chi-Ying WU ,  Wei-Ming YOU ,  Ziwei FANG ,  Huang-Lin CHAO

IPC: H01L21/322 ,  H01L21/28 ,  H01L21/762 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The isolation layer includes fluorine, and a first concentration of fluorine in the isolation layer increases toward a top surface of the isolation layer. The semiconductor device structure includes a gate stack over the isolation layer and wrapping around the fin portion.

公开(公告)号：US20220334462A1

公开(公告)日：2022-10-20

申请号：US17855630

申请日：2022-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Yen-Cheng HO ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/24 ,  G03F1/68 ,  G03F1/54 ,  G03F1/52 ,  G03F1/26

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

公开(公告)号：US20190258156A1

公开(公告)日：2019-08-22

申请号：US16399843

申请日：2019-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Chih-Cheng LIN ,  Ping-Hsun LIN

IPC: G03F1/44 ,  G03F1/76 ,  G03F7/20 ,  G03F1/84 ,  G03F1/22 ,  H01L21/027 ,  G03F1/72 ,  G03F1/54 ,  G03F1/78

Abstract: A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.