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公开(公告)号：US20230314963A1
公开(公告)日：2023-10-05
申请号：US18200951
申请日：2023-05-23
Inventor： Chen-Yang LIN , Da-Wei YU , Li-Hsin WANG , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
CPC classification number: G03F7/70925 , G03F1/22 , G03F1/82
Abstract: A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.
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公开(公告)号：US20210247687A1
公开(公告)日：2021-08-12
申请号：US17244662
申请日：2021-04-29
Inventor： Wen-Chang HSUEH , Huan-Ling LEE , Chia-Jen CHEN , Hsin-Chang LEE
Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.
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公开(公告)号：US20160011501A1
公开(公告)日：2016-01-14
申请号：US14327834
申请日：2014-07-10
Inventor： Tao-Min HUANG , Chia-Jen CHEN , Hsin-Chang LEE , Chih-Tsung SHIH , Shinn-Sheng YU , Jeng-Horng CHEN , Anthony YEN
CPC classification number: G03F7/2004 , G03F1/24 , G03F1/36 , G03F1/38 , G03F7/20 , G03F7/7055
Abstract: A photomask having a partial-thickness assist feature and a technique for manufacturing the photomask are disclosed. In an exemplary embodiment, the photomask includes a mask substrate, a reflective structure disposed on the mask substrate, and an absorptive layer formed on the reflective structure. A printing feature region and an assist feature region are defined on the mask. The absorptive layer has a first thickness in the printing feature region and a second thickness in the assist feature region that is different from the first thickness. In some such embodiments, the second thickness is configured such that radiation reflected by the assist feature region does not exceed an exposure threshold of a photoresist of a target.
Abstract translation: 公开了具有局部厚度辅助特征的光掩模和用于制造光掩模的技术。 在示例性实施例中，光掩模包括掩模基板，设置在掩模基板上的反射结构和形成在反射结构上的吸收层。 在掩模上定义打印特征区域和辅助特征区域。 吸收层在印刷特征区域中具有第一厚度，在辅助特征区域中具有与第一厚度不同的第二厚度。 在一些这样的实施例中，第二厚度被配置为使得由辅助特征区域反射的辐射不超过目标的光刻胶的曝光阈值。
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公开(公告)号：US20240387528A1
公开(公告)日：2024-11-21
申请号：US18788203
申请日：2024-07-30
Inventor： Chen-Huang HUANG , Yu-Ling CHENG , Shun-Hui YANG , An Chyi WEI , Chia-Jen CHEN , Shang-Shuo HUANG , Chia-I LIN , Chih-Chang HUNG
IPC: H01L27/088 , H01L21/8234
Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.
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公开(公告)号：US20230260993A1
公开(公告)日：2023-08-17
申请号：US17672216
申请日：2022-02-15
Inventor： Chen-Huang HUANG , Yu-Ling CHENG , Shun-Hui YANG , An Chyi WEI , Chia-Jen CHEN , Shang-Shuo HUANG , Chia-I LIN , Chih-Chang HUNG
IPC: H01L27/088 , H01L21/8234
CPC classification number: H01L27/088 , H01L21/823481
Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20220357661A1
公开(公告)日：2022-11-10
申请号：US17815041
申请日：2022-07-26
Inventor： Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
IPC: G03F7/20
Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.
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公开(公告)号：US20150104736A1
公开(公告)日：2015-04-16
申请号：US14531639
申请日：2014-11-03
Inventor： Pei-Cheng HSU , Chih-Tsung SHIH , Chia-Jen CHEN , Tsiao-Chen WU , Shinn-Sheng YU , Hsin-Chang LEE , Anthony YEN
IPC: G03F1/24 , G03F1/48 , H01L21/033
CPC classification number: G03F1/24 , G03F1/48 , H01L21/0337
Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.
Abstract translation: 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层与覆盖层接触。 在一些情况下，边界沟穿过覆盖层并部分地进入反射层。
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公开(公告)号：US20240385506A1
公开(公告)日：2024-11-21
申请号：US18787278
申请日：2024-07-29
Inventor： Hsin-Chang LEE , Chia-Jen CHEN , Pei-Cheng HSU , Ta-Cheng LIEN
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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公开(公告)号：US20230367194A1
公开(公告)日：2023-11-16
申请号：US18343493
申请日：2023-06-28
Inventor： Wen-Chang HSUEH , Huan-Ling LEE , Chia-Jen CHEN , Hsin-Chang LEE
Abstract: A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.
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公开(公告)号：US20220308464A1
公开(公告)日：2022-09-29
申请号：US17367835
申请日：2021-07-06
Inventor： Chung-Hsuan LIU , Chen-Yang LIN , Ku-Hsiang SUNG , Da-Wei YU , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
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