Invention Application
- Patent Title: FIELD EFFECT TRANSISTOR (FET) STACK AND METHODS TO FORM SAME
-
Application No.: US16855236Application Date: 2020-04-22
-
Publication No.: US20210336005A1Publication Date: 2021-10-28
- Inventor: Steven M. Shank , Anthony K. Stamper , Vibhor Jain , John J. Ellis-Monaghan
- Applicant: GLOBALFOUNDRIES U.S. Inc
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc
- Current Assignee: GLOBALFOUNDRIES U.S. Inc
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78

Abstract:
The disclosure provides a field effect transistor (FET) stack with methods to form the same. The FET stack includes a first transistor over a substrate. The first transistor includes a first active semiconductor material including a first channel region between a first set of source/drain terminals, and a first gate structure over the first channel region. The first gate structure includes a first gate insulator of a first thickness above the first channel region. A second transistor is over the substrate and horizontally separated from the first transistor. A second gate structure of the second transistor may include a second gate insulator of a second thickness above a second channel region, the second thickness being greater than the first thickness. A shared gate node may be coupled to each of the first gate structure and the second gate structure.
Public/Granted literature
- US11411081B2 Field effect transistor (FET) stack and methods to form same Public/Granted day:2022-08-09
Information query
IPC分类: