公开(公告)号：US12293994B2

公开(公告)日：2025-05-06

申请号：US17955225

申请日：2022-09-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vvss Satyasuresh Choppalli ,  Anupam Dutta ,  Rajendran Krishnasamy ,  Robert Gauthier, Jr. ,  Xiang Xiang Lu ,  Anindya Nath

IPC: H01L25/07 ,  H01L21/77 ,  H01L23/14 ,  H01L23/522

Abstract: Structures including multiple semiconductor devices and methods of forming same. The structure comprises a first device structure including a first well and a second well in a semiconductor substrate, a second device structure including a doped region in the semiconductor substrate, and a first high-resistivity region in the semiconductor substrate. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the first well adjoins the second well to define a p-n junction. The doped region of the second device structure has the first conductivity type or the second conductivity type. The high-resistivity region has a higher electrical resistivity than the semiconductor substrate, and the high-resistivity region is positioned between the first device structure and the second device structure.

公开(公告)号：US12293086B2

公开(公告)日：2025-05-06

申请号：US18315696

申请日：2023-05-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Shashank Nemawarkar ,  Bipul C. Paul

IPC: G06F3/06

Abstract: An apparatus and method for providing high throughput memory responses are provided. The apparatus includes a memory device including a plurality of memory arrays, a memory controller configured to control the memory device, the memory controller having a read queue, a write queue, and an address match circuit, and a data output circuit. The memory controller receives a read request, searches the write queue for a write address that matches a read address of the read request, and sends data associated with the write address from the write queue to the data output circuit without accessing the memory device when the write address matches the read address, the write address that matches the read address being a target address. The data output circuit outputs the data associated with the target address to an external device.

公开(公告)号：US12292596B2

公开(公告)日：2025-05-06

申请号：US17892584

申请日：2022-08-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/122

Abstract: Structures for an optical coupler and methods of forming an optical coupler. The structure comprises a first waveguide core including a first tapered section, a second waveguide core including a second tapered section overlapped with the first tapered section, and an active layer including a third tapered section overlapped with the second tapered section. The first waveguide core comprises a first passive material, the second waveguide core comprises a second passive material, and the active layer comprises an active material.

公开(公告)号：US20250142860A1

公开(公告)日：2025-05-01

申请号：US18385255

申请日：2023-10-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Steven J. Bentley ,  Santosh Sharma ,  Johnatan A. Kantarovsky ,  Mark D. Levy ,  Michael J. Zierak

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a gate structure; a first barrier layer under and adjacent to the gate structure; and a second barrier layer over the first barrier layer and which is adjacent to the gate structure.

公开(公告)号：US12281996B2

公开(公告)日：2025-04-22

申请号：US17808176

申请日：2022-06-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. Adusumilli ,  Mark D. Levy ,  Ramsey M. Hazbun ,  John J. Ellis-Monaghan

IPC: G01N27/06 ,  H10F30/223 ,  H10F71/00 ,  H10F77/14

Abstract: Disclosed is a semiconductor structure with a photodiode including: a well region with a first-type conductivity in a substrate, a trench in the well region, and multiple conformal semiconductor layers in the trench. The semiconductor layers include a first semiconductor layer, which is, for example, an intrinsic semiconductor layer and lines the trench, and a second semiconductor layer, which has a second-type conductivity and which is on the first semiconductor layer within (but not filling) the trench and which also extends outside the trench onto a dielectric layer. An additional dielectric layer extends over and caps a cavity that is at least partially within the trench such that surfaces of the second semiconductor layer are exposed within the cavity. Fluid inlet/outlet ports extend to the cavity and contacts extend to the well region and to the second semiconductor layer. Also disclosed are methods for forming and using the semiconductor structure.

公开(公告)号：US20250120156A1

公开(公告)日：2025-04-10

申请号：US18378312

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett T. Cucci ,  Jacob M. DeAngelis ,  Spencer H. Porter ,  Trevor S. Wills ,  Mark D. Levy

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.

公开(公告)号：US20250120155A1

公开(公告)日：2025-04-10

申请号：US18376668

申请日：2023-10-04

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark D. Levy ,  Johnatan A. Kantarovsky ,  Michael J. Zierak ,  Santosh Sharma ,  Steven J. Bentley

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.

公开(公告)号：US20250116819A1

公开(公告)日：2025-04-10

申请号：US18376864

申请日：2023-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Aneesh Dash ,  Michal Rakowski ,  Avijit Chatterjee ,  Rupa Gopinath Minasamudram

IPC: G02B6/35

Abstract: Structures for an optical switch and methods of forming such structures. The structure comprises a first waveguide core including a first portion and a second portion, a second waveguide core including a first portion and a second portion, a ring resonator having a first portion adjacent to the first portion of the first waveguide core and a second portion adjacent to the first portion of the second waveguide core, and an optical coupler coupled to the second portion of first waveguide core and the second portion of the second waveguide core. The first portion of the ring resonator is spaced from the first portion of the first waveguide core by a first gap over a first light coupling region, and the second portion of the ring resonator is spaced from the first portion of the second waveguide core by a second gap over a second light coupling region.

公开(公告)号：US12272758B2

公开(公告)日：2025-04-08

申请号：US17241525

申请日：2021-04-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asif J. Chowdhury ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Andreas D. Stricker

IPC: H01L31/0232 ,  G02B6/24 ,  G02B6/12

Abstract: Structures for a photodetector or light absorber and methods of forming a structure for a photodetector or light absorber. The structure includes a pad, a waveguide core adjoined to the pad, and a light-absorbing layer on the pad. The waveguide core includes a first longitudinal axis, and the light-absorbing layer includes a second longitudinal axis and an end surface intersected by the second longitudinal axis. The end surface of the light-absorbing layer is positioned adjacent to the waveguide core. The first longitudinal axis of the first waveguide core is inclined relative to the second longitudinal axis of the light-absorbing layer and/or the end surface slanted relative to the second longitudinal axis.

公开(公告)号：US12271030B2

公开(公告)日：2025-04-08

申请号：US17952969

申请日：2022-09-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Won Suk Lee

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/13

Abstract: Structures for an optical coupler and methods of forming a structure for an optical coupler. The structure comprises a stacked waveguide core including a first waveguide core and a second waveguide core. The first waveguide core includes a first tapered section, and the second waveguide core includes a second tapered section positioned to overlap with the first tapered section. The structure further comprises a third waveguide core including a third tapered section positioned adjacent to the first tapered section of the first waveguide core and the second tapered section of the second waveguide core.