A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.