- 专利标题: SURFACE MODIFICATION OF SILICON-CONTAINING ELECTRODES USING CARBON DIOXIDE
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申请号: US17393145申请日: 2021-08-03
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公开(公告)号: US20210367226A1公开(公告)日: 2021-11-25
- 发明人: Heidi Leighette Anderson , Benjamin Yong Park , Frederic C. Bonhomme
- 申请人: ENEVATE CORPORATION
- 申请人地址: US CA Irvine
- 专利权人: ENEVATE CORPORATION
- 当前专利权人: ENEVATE CORPORATION
- 当前专利权人地址: US CA Irvine
- 主分类号: H01M4/1395
- IPC分类号: H01M4/1395 ; H01M4/62 ; H01M4/36 ; H01M4/134 ; H01M4/505 ; H01M4/38 ; H01M4/04 ; H01M4/525
摘要:
Various implementations of a method of forming an electrochemical cell include providing a first electrode, a second electrode, a separator between the first and second electrodes, and an electrolyte in a cell container. The first electrode can include silicon-dominant electrochemically active material. The silicon-dominant electrochemically active material can include greater than 50% silicon by weight. The method can also include exposing at least a part of the electrochemical cell to CO2, and forming a solid electrolyte interphase (SEI) layer on the first electrode using the CO2.
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