- 专利标题: Magnetic Sensor Bridge Using Dual Free Layer
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申请号: US16912500申请日: 2020-06-25
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公开(公告)号: US20210405131A1公开(公告)日: 2021-12-30
- 发明人: Xiaoyong LIU , Quang LE , Zhigang BAI , Daniele MAURI , Zhanjie LI , Kuok San HO , Thao A. NGUYEN , Rajeev NAGABHIRAVA
- 申请人: Western Digital Technologies, Inc.
- 申请人地址: US CA San Jose
- 专利权人: Western Digital Technologies, Inc.
- 当前专利权人: Western Digital Technologies, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G01R27/14
摘要:
The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.
公开/授权文献
- US11275130B2 Magnetic sensor bridge using dual free layer 公开/授权日:2022-03-15
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