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公开(公告)号：US20230197132A1
公开(公告)日：2023-06-22
申请号：US17854568
申请日：2022-06-30
发明人： Quang LE , Cherngye HWANG , Brian R. YORK , Randy G. SIMMONS , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO , Michael A. GRIBELYUK , Xiaoyu XU
CPC分类号： G11C11/161 , G11C11/1675 , G11C11/1673 , H01L43/08 , H01L43/10 , H01L43/04 , H01L43/14 , H01L43/06 , H01L27/222
摘要： The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
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公开(公告)号：US20230027086A1
公开(公告)日：2023-01-26
申请号：US17954679
申请日：2022-09-28
发明人： Quang LE , Cherngye HWANG , Brian R. YORK , Andrew CHEN , Thao A. NGUYEN , Yongchul AHN , Xiaoyong LIU , Hongquan JIANG , Zheng GAO , Kuok San HO
摘要： A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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公开(公告)号：US20210336127A1
公开(公告)日：2021-10-28
申请号：US16861118
申请日：2020-04-28
发明人： Quang LE , Cherngye HWANG , Brian R. YORK , Andrew CHEN , Thao A. NGUYEN , Yongchul AHN , Xiaoyong LIU , Hongquan JIANG , Zheng GAO , Kuok San HO
摘要： A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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公开(公告)号：US20240240994A1
公开(公告)日：2024-07-18
申请号：US18355102
申请日：2023-07-19
发明人： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Rohan Babu NAGABHIRAVA , Kuok San HO , Hisashi TAKANO , Son T. LE , Nam Hai PHAM , Huy H. HO
CPC分类号： G01K7/36 , G11B5/3906 , G11B2005/0021
摘要： The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.
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公开(公告)号：US20230121375A1
公开(公告)日：2023-04-20
申请号：US18082721
申请日：2022-12-16
发明人： Quang LE , Brian R. YORK , Cherngye HWANG , Susumu OKAMURA , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO
摘要： The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.
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公开(公告)号：US20220078348A1
公开(公告)日：2022-03-10
申请号：US17455862
申请日：2021-11-19
发明人： Quang LE , Rajeev NAGABHIRAVA , Kuok San HO , Zhigang BAI , Zhanjie LI , Xiaoyong LIU , Daniele MAURI
摘要： Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
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公开(公告)号：US20220005498A1
公开(公告)日：2022-01-06
申请号：US17395291
申请日：2021-08-05
发明人： Quang LE , Xiaoyong LIU , Zhigang BAI , Zhanjie LI , Kuok San HO , Hisashi TAKANO
摘要： The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).
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公开(公告)号：US20210405131A1
公开(公告)日：2021-12-30
申请号：US16912500
申请日：2020-06-25
发明人： Xiaoyong LIU , Quang LE , Zhigang BAI , Daniele MAURI , Zhanjie LI , Kuok San HO , Thao A. NGUYEN , Rajeev NAGABHIRAVA
摘要： The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.
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公开(公告)号：US20210390978A1
公开(公告)日：2021-12-16
申请号：US16899366
申请日：2020-06-11
发明人： Chih-Ching HU , Yung-Hung WANG , Ming MAO , Guanxiong LI , Daniele MAURI , Xiaoyong LIU , Yukimasa OKADA , Anup ROY , Chen-jung CHIEN , Hongxue LIU
IPC分类号： G11B5/39
摘要： The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
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公开(公告)号：US20240144965A1
公开(公告)日：2024-05-02
申请号：US18228529
申请日：2023-07-31
发明人： Quang LE , Rohan Babu NAGABHIRAVA , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC分类号： G11B5/39 , G11B5/11 , G11B2005/3996
摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.
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