Invention Application
- Patent Title: METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION
-
Application No.: US17477741Application Date: 2021-09-17
-
Publication No.: US20220005704A1Publication Date: 2022-01-06
- Inventor: Xuebin LI , Wei LIU , Gaurav THAREJA , Shashank SHARMA , Patricia M. LIU , Schubert CHU
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/285 ; H01L21/768 ; H01L21/67 ; H01L29/40 ; H01L21/02 ; H01L23/532 ; H01L21/8234 ; H01L21/3205 ; H01L29/417
Abstract:
Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
Public/Granted literature
- US11615986B2 Methods and apparatus for metal silicide deposition Public/Granted day:2023-03-28
Information query
IPC分类:
