- 专利标题: SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
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申请号: US16919078申请日: 2020-07-01
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公开(公告)号: US20220005758A1公开(公告)日: 2022-01-06
- 发明人: Sheng-Fu HUANG , Shing-Yih SHIH
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei City
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei City
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/762 ; H01L21/768 ; H01L23/528 ; H01L23/48
摘要:
A semiconductor structure includes a first wafer, a conductive via, an isolation layer, and a spacer structure. The first wafer includes a semiconductor substrate, a multi-level interconnect structure, and a dielectric layer. The semiconductor substrate has a front side and a back side. The multi-level interconnect structure is disposed over the front side of the semiconductor substrate. The dielectric layer is disposed over the back side of the semiconductor substrate. The conductive via extends from the dielectric layer to a conductive line of the multi-level interconnect structure. The isolation layer is disposed between the conductive via and the first wafer. The spacer structure is disposed between the conductive via and the isolation layer, in which the spacer structure is spaced apart from the conductive line.
公开/授权文献
- US11217525B1 Semiconductor structure and method of forming the same 公开/授权日:2022-01-04
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