Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17476099Application Date: 2021-09-15
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Publication No.: US20220005804A1Publication Date: 2022-01-06
- Inventor: Fujio SHIMIZU , Tsuyoshi KACHI , Yoshinori YOSHIDA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-113133 20190618
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8234 ; H01L29/78 ; H01L27/06 ; H01L21/762
Abstract:
A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.
Information query
IPC分类:
