In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.