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1.发明授权公开(公告)号：US12100782B2
公开(公告)日：2024-09-24
申请号：US17435612
申请日：2020-03-03
发明人： Alvaro Gomez-Iglesias , Asako Hirai
IPC分类号： H01L33/14 , H01L31/0352 , H01L31/18 , H01L33/00 , H01L33/06
CPC分类号： H01L33/14 , H01L31/035236 , H01L31/03529 , H01L31/1848 , H01L31/1852 , H01L33/007 , H01L33/06
摘要： In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first layer and the second layer, the semiconductor layer sequence having at least one injection region, wherein the first layer includes a first conductivity type, wherein the second layer includes a second conductivity type, wherein the semiconductor layer sequence includes the first conductivity type within the entire injection region, wherein the injection region, starting from the first layer, at least partially penetrates the active layer, wherein side surfaces of the semiconductor layer sequence are formed at least in places by the injection region, and wherein the injection region is configured to inject charge carriers directly into the active layer.
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公开(公告)号：US09559494B2
公开(公告)日：2017-01-31
申请号：US14805808
申请日：2015-07-22
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
摘要翻译： 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。
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公开(公告)号：US20150325979A1
公开(公告)日：2015-11-12
申请号：US14805808
申请日：2015-07-22
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
摘要翻译： 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。
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公开(公告)号：US08976831B2
公开(公告)日：2015-03-10
申请号：US14206676
申请日：2014-03-12
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
摘要： An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
摘要翻译： 一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。 公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中 第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。
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公开(公告)号：US20220020811A1
公开(公告)日：2022-01-20
申请号：US17310394
申请日：2020-01-23
摘要： In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.
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公开(公告)号：US20190109246A1
公开(公告)日：2019-04-11
申请号：US16196915
申请日：2018-11-20
发明人： Asako Hirai , Tobias Meyer , Philipp Drechsel , Peter Stauß , Anna Nirschl , Alvaro Gomez-Iglesias , Tobias Niebling , Bastian Galler
IPC分类号： H01L31/0352 , H01L33/06 , H01L29/15
CPC分类号： H01L31/0352 , H01L29/151 , H01L29/152 , H01L31/035236 , H01L33/06
摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.
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公开(公告)号：US10510916B2
公开(公告)日：2019-12-17
申请号：US16306522
申请日：2017-05-26
IPC分类号： H01L31/105 , H01L31/0304 , H01L31/18
摘要： A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0≤n≤1, 0≤m≤1 and n+m
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公开(公告)号：US20170098919A1
公开(公告)日：2017-04-06
申请号：US15381271
申请日：2016-12-16
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： A laser system includes an edge emitting semiconductor laser, and an optical fiber, wherein the laser emits one or more laser beams coupled into the optical fiber and the laser includes a semiconductor body including a waveguide region that includes first and second waveguide layers and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region, a phase structure is formed in the semiconductor body, includes a cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer composed of a semiconductor material different from the material of the second cladding layer is embedded therein, and the cutout extends from the top side of the semiconductor body at least partly into the first intermediate layer.
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公开(公告)号：US09490389B2
公开(公告)日：2016-11-08
申请号：US14857698
申请日：2015-09-17
IPC分类号： H01L21/00 , H01L33/00 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/22 , H01L33/24 , H01L33/02
摘要： The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).
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10.发明申请公开(公告)号：US20160141837A1
公开(公告)日：2016-05-19
申请号：US14895542
申请日：2014-06-17
IPC分类号： H01S5/20
CPC分类号： H01S5/2031 , H01S5/1014 , H01S5/1082 , H01S5/209 , H01S5/3213 , H01S2301/18
摘要： An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.
摘要翻译： 边缘发射半导体激光器包括具有具有有源层的波导层的半导体结构，该波导层在半导体结构的第一和第二侧面之间沿纵向方向延伸，该半导体结构具有与第一侧相邻的锥形区域 锥形区域中的波导层的厚度纵向增加，波导层布置在第一和第二包层之间，半导体结构的锥形区域中的第二包层的厚度纵向增加，锥形区域包括第一 和第二子区域，第一子区域布置成比第二子区域更靠近第一侧面，波导层的厚度在第一子区域中纵向增加，波导层的厚度在第二子区域中的纵向方向上是恒定的，并且厚度 的第二包层增加了纵向 在第二个次区域内。
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