发明申请
- 专利标题: MANUFACTURING METHOD OF DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE
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申请号: US17449607申请日: 2021-09-30
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公开(公告)号: US20220020867A1公开(公告)日: 2022-01-20
- 发明人: Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
- 申请人: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN Hefei; CN Beijing
- 专利权人: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Hefei; CN Beijing
- 优先权: CN201711181291.9 20171123
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L29/786 ; H01L21/44 ; H01L21/4763 ; H01L21/475 ; H01L29/40 ; H01L21/4757 ; H01L27/12 ; H01L21/027 ; H01L21/311 ; H01L21/3213
摘要:
A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.