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公开(公告)号：US20240363737A1
公开(公告)日：2024-10-31
申请号：US18769204
申请日：2024-07-10
发明人： Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC分类号： H01L29/66 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/44 , H01L21/475 , H01L21/4757 , H01L21/4763 , H01L27/12 , H01L29/40 , H01L29/417 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L21/44 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1288 , H01L29/401 , H01L29/7869 , H01L29/41733 , H01L29/78633
摘要： Provided are a manufacturing method of a display substrate, a display substrate, and a display device. The display substrate includes: a base substrate; and a top-gate type thin film transistor located on a side of the base substrate, the top-gate type thin film transistor comprises an active layer, a gate insulation layer and a gate electrode sequentially disposed in a direction away from the base substrate. A side surface of the gate insulation layer close to the gate electrode extends beyond an edge of the gate electrode in a direction parallel to the base substrate, and a side surface of the active layer close to the gate insulation layer extends beyond an edge of the gate insulation layer in the direction parallel to the base substrate.
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公开(公告)号：US11469394B2
公开(公告)日：2022-10-11
申请号：US17051323
申请日：2020-03-02
发明人： Leilei Cheng , Tongshang Su , Qinghe Wang , Guangyao Li , Wei Song , Ning Liu , Yang Zhang , Yongchao Huang
摘要： The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.
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公开(公告)号：US11287333B2
公开(公告)日：2022-03-29
申请号：US16614788
申请日：2019-05-17
发明人： Qinghe Wang , Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Leilei Cheng , Yang Zhang , Guangyao Li
摘要： A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
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公开(公告)号：US20210124226A1
公开(公告)日：2021-04-29
申请号：US16964278
申请日：2019-12-13
发明人： Leilei Cheng , Jingang Fang , Luke Ding , Jun Liu , Wei Li , Bin Zhou
IPC分类号： G02F1/1362 , H01L21/768 , H01L23/532 , H01L27/12
摘要： A method of manufacturing an array substrate is provided, which comprises: forming a first metal layer and an insulating layer in sequence on a base substrate, the insulating layer covering the first metal layer; forming an etch barrier layer on the insulating layer; etching the etching barrier layer and the insulating layer multiple times, wherein an effective blocking area of the etching barrier layer decreases successively in each etching to form a connection hole penetrating the insulating layer, the connection hole includes a plurality of via holes connected in sequence, and a slope angle of a hole wall of each via hole is smaller than a preset slope angle; and forming a second metal layer, the second metal layer being connected to the first metal layer through the connection hole.
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公开(公告)号：US10553801B2
公开(公告)日：2020-02-04
申请号：US15991134
申请日：2018-05-29
发明人： Jun Wang , Guangyao Li , Dongfang Wang , Jun Liu , Guangcai Yuan , Leilei Cheng
摘要： The present disclosure relates to a substrate, a method for fabricating the same and an organic light emitting diode display device. The substrate includes a metal foil. A metal material used for the metal foil is capable of being anodized and a plurality of concave light trapping microstructures is formed on a surface of the metal foil.
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公开(公告)号：US10431639B2
公开(公告)日：2019-10-01
申请号：US15743082
申请日：2017-06-29
发明人： Leilei Cheng , Bin Zhou
摘要： A display substrate, a manufacturing method thereof, and a display device are provided, and the manufacturing method includes: providing a base substrate; forming a pixel definition layer on the base substrate; oxidizing the pixel definition layer, in which a surface of the pixel definition layer distal to the base substrate is partially oxidized, such that the pixel definition layer includes a main layer proximal to the base substrate and an oxide layer distal to the base substrate; curing and molding the pixel definition layer, and patterning the pixel definition layer to form a pixel definition layer pattern.
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公开(公告)号：US20190157432A1
公开(公告)日：2019-05-23
申请号：US15983055
申请日：2018-05-17
发明人： Jun Liu , Luke Ding , Jiangang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC分类号： H01L29/66 , H01L29/786 , H01L21/44 , H01L21/4763 , H01L21/4757 , H01L21/475 , H01L29/40
摘要： A manufacturing method of a display substrate, a display substrate, and a display device are disclosed. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.
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公开(公告)号：US10217955B2
公开(公告)日：2019-02-26
申请号：US15814690
申请日：2017-11-16
发明人： Leilei Cheng , Jun Bao , Dongfang Wang , Ce Zhao
IPC分类号： H01L51/52 , H01L27/32 , H01L51/56 , H01L51/00 , H01L21/28 , H01L23/482 , H01L29/43 , H01L29/49
摘要： A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.
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公开(公告)号：US11882716B2
公开(公告)日：2024-01-23
申请号：US17336523
申请日：2021-06-02
发明人： Yang Zhang , Ning Liu , Bin Zhou , Leilei Cheng , Liangchen Yan , Jun Liu , Qinghe Wang , Tao Sun , Zhiwen Luo
IPC分类号： H10K50/824 , H10K50/84 , H10K50/814 , H10K59/122 , H10K71/00
CPC分类号： H10K50/824 , H10K50/814 , H10K50/84 , H10K59/122 , H10K71/00
摘要： A method for manufacturing a display panel includes: sequentially forming a conductive pattern, a light-emitting layer and a cathode layer on a substrate. The conductive pattern is formed by a one-time patterning process, and includes an auxiliary electrode layer. In a direction parallel to the substrate, both the first protective electrode and the second protective electrode in the auxiliary electrode layer extend over the metal electrode, a second orthographic projection of the second protective electrode on the substrate is within a first orthographic projection of the first protective electrode on the substrate, and an outer boundary of the second orthographic projection is staggered from an outer boundary of the first orthographic projection. The cathode layer is in contact with the first protective electrode and a sidewall of the metal electrode.
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公开(公告)号：US20220020867A1
公开(公告)日：2022-01-20
申请号：US17449607
申请日：2021-09-30
发明人： Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC分类号： H01L29/66 , H01L29/786 , H01L21/44 , H01L21/4763 , H01L21/475 , H01L29/40 , H01L21/4757 , H01L27/12 , H01L21/027 , H01L21/311 , H01L21/3213
摘要： A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.
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