- 专利标题： SYSTEMS AND METHODS FOR LOW PRESSURE DIAMOND GROWTH WITHOUT PLASMA INCLUDING SEEDING GROWTH
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申请号： US17290701申请日： 2019-11-01
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公开(公告)号： US20220025544A1公开(公告)日： 2022-01-27
- 发明人: Philip R. Hemmer , Masfer Hassan A. Alkahtani , Fedor Jelezko , Todd Zapata , Tanja Weil , Isaac V. Rampersaud
- 申请人： The Texas A&M University System , King Abdulaziz City for Science and Technology , Ulm University , Max-Planck Institute for Polymer Research
- 申请人地址： US TX College Station; SA Riyadh; DE Ulm; DE Mainz
- 专利权人： The Texas A&M University System,King Abdulaziz City for Science and Technology,Ulm University,Max-Planck Institute for Polymer Research
- 当前专利权人： The Texas A&M University System,King Abdulaziz City for Science and Technology,Ulm University,Max-Planck Institute for Polymer Research
- 当前专利权人地址： US TX College Station; SA Riyadh; DE Ulm; DE Mainz
- 国际申请： PCT/US19/59368 WO 20191101
- 主分类号： C30B29/04
- IPC分类号： C30B29/04 ; B01J3/06 ; C01B32/26 ; C01B32/15 ; C09K11/06
摘要：
A method for low-pressure diamond growth includes heating a composition comprising a diamond growth seed and a source of reactive carbon to a temperature below 800° C., wherein the heating takes place under low pressure. Responsive to the heating, growing diamonds from the composition.
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