Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17518614Application Date: 2021-11-04
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Publication No.: US20220059409A1Publication Date: 2022-02-24
- Inventor: Shunpei YAMAZAKI , Toshihiko TAKEUCHI , Tsutomu MURAKAWA , Hiroki KOMAGATA , Daisuke MATSUBAYASHI , Noritaka ISHIHARA , Yusuke NONAKA
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2017-170022 20170905,JP2017-170023 20170905,JP2017-238210 20171213
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/06 ; H01L27/088 ; H01L27/108 ; H01L29/786
Abstract:
A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
Public/Granted literature
- US11804407B2 Semiconductor device having plurality of insulators Public/Granted day:2023-10-31
Information query
IPC分类:
