- 专利标题: METHOD FOR PREPARING MODIFIED POLYPROPYLENE FILM
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申请号: US17038210申请日: 2020-09-30
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公开(公告)号: US20220064396A1公开(公告)日: 2022-03-03
- 发明人: Daniel Qi Tan , Guanghui Song , Xudong Wu
- 申请人: Guangdong Technion Israel Institute of Technology
- 申请人地址: CN Shantou
- 专利权人: Guangdong Technion Israel Institute of Technology
- 当前专利权人: Guangdong Technion Israel Institute of Technology
- 当前专利权人地址: CN Shantou
- 优先权: CN202010913566.9 20200903
- 主分类号: C08J7/06
- IPC分类号: C08J7/06 ; H01G4/33 ; H01G4/14 ; C23C14/06 ; C23C14/08 ; C23C16/34 ; C23C16/40
摘要:
The disclosure belongs to the field of film materials, and discloses a high-temperature resistant modified polypropylene film, and a preparation method and use thereof. The modified polypropylene film includes a polypropylene film, and an oxide layer and/or nitride layer, each of which has a thickness of 20-500 nm, on the surface of the polypropylene film. It can significantly improve the thermal stability and high-temperature withstand voltage property of the polypropylene film by depositing the oxide layer or nitride layer of appropriate thickness on the surface of the polypropylene film by an ALD technology. The modified polypropylene film has high-temperature resistance, such as resistance to at high temperature of 150° C., and very small deformation quantity at high temperature, and can withstand a high breakdown voltage at high temperature. For example, the modified polypropylene film can withstand a voltage of 580 kV/mm at 140° C. The modified polypropylene film has widespread applications in the field of electronic products with high temperature requirements, such as the field of capacitors.
公开/授权文献
- US11597808B2 Method for preparing modified polypropylene film 公开/授权日:2023-03-07