- 专利标题： SEMICONDUCTOR MEMORY
-
申请号： US17524984申请日： 2021-11-12
-
公开(公告)号： US20220077170A1公开(公告)日： 2022-03-10
- 发明人: Yoshiaki FUKUZUMI , Keisuke SUDA , Fumiki AISO , Atsushi FUKUMOTO
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2018-079578 20180418
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L27/11582 ; G11C16/04 ; G11C5/06
摘要：
A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.
公开/授权文献
- US12069855B2 Semiconductor memory 公开/授权日：2024-08-20
信息查询
IPC分类:
