公开(公告)号：US20220077170A1

公开(公告)日：2022-03-10

申请号：US17524984

申请日：2021-11-12

申请人： Toshiba Memory Corporation

发明人： Yoshiaki FUKUZUMI ,  Keisuke SUDA ,  Fumiki AISO ,  Atsushi FUKUMOTO

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  G11C16/04 ,  G11C5/06

摘要： A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.

公开(公告)号：US20180083028A1

公开(公告)日：2018-03-22

申请号：US15459319

申请日：2017-03-15

申请人： Toshiba Memory Corporation

发明人： Atsushi FUKUMOTO ,  Fumiki AISO ,  Hajime NAGANO ,  Takuo OHASHI

IPC分类号： H01L27/11582 ,  H01L29/04 ,  H01L29/10 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L27/11556

CPC分类号： H01L27/11582 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/3065 ,  H01L21/31116 ,  H01L27/11556 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/1041

摘要： According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

公开(公告)号：US20190326310A1

公开(公告)日：2019-10-24

申请号：US16291347

申请日：2019-03-04

申请人： Toshiba Memory Corporation

发明人： Yoshiaki FUKUZUMI ,  Keisuke SUDA ,  Fumiki AISO ,  Atsushi FUKUMOTO

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  G11C5/06 ,  G11C16/04

摘要： A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.

公开(公告)号：US20190067317A1

公开(公告)日：2019-02-28

申请号：US15913947

申请日：2018-03-07

申请人： Toshiba Memory Corporation

发明人： Tomonari SHIODA ,  Junya FUJITA ,  Tatsuro NISHIMOTO ,  Yoshiaki FUKUZUMI ,  Atsushi FUKUMOTO ,  Hajime NAGANO

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L29/36 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/40117 ,  H01L29/7827 ,  H01L51/5259

摘要： According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.