Invention Application
- Patent Title: THERMOELECTRIC MATERIAL MANUFACTURING METHOD
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Application No.: US17422362Application Date: 2019-06-12
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Publication No.: US20220077375A1Publication Date: 2022-03-10
- Inventor: Jongrae LIM , Jun KIM , Jooyoung PARK , Jeonghun SON , Youngil JANG
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- International Application: PCT/KR2019/007040 WO 20190612
- Main IPC: H01L35/34
- IPC: H01L35/34 ; H01L35/26 ; B22F9/08 ; B22F3/105 ; B22F3/20

Abstract:
The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material manufacturing method for increasing potential density. The thermoelectric material manufacturing method of the present invention can comprise the steps of: preparing a bulk thermoelectric material by using thermoelectric material raw materials; preparing a powder of the bulk thermoelectric material; adding, to the powder, a metal additive selected from the thermoelectric material raw materials; forming an intermediate in which the metal additive is dispersed in the thermoelectric material; and sintering same at at least the melting point temperature of the metal additive.
Public/Granted literature
- US12279528B2 Thermoelectric material manufacturing method Public/Granted day:2025-04-15
Information query
IPC分类: