Invention Application
- Patent Title: LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE
-
Application No.: US17414428Application Date: 2019-12-18
-
Publication No.: US20220093463A1Publication Date: 2022-03-24
- Inventor: Atsushi TANAKA , Chiaki SASAOKA , Hiroshi AMANO , Daisuke KAWAGUCHI , Yotaro WANI , Yasunori IGASAKI
- Applicant: National University Corporation Tokai National Higher Education and Research System , HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Nagoya-shi, Aichi; JP Hamamatsu-shi, Shizuoka
- Assignee: National University Corporation Tokai National Higher Education and Research System,HAMAMATSU PHOTONICS K.K.
- Current Assignee: National University Corporation Tokai National Higher Education and Research System,HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Nagoya-shi, Aichi; JP Hamamatsu-shi, Shizuoka
- Priority: JP2018-239883 20181221
- International Application: PCT/JP2019/049700 WO 20191218
- Main IPC: H01L21/78
- IPC: H01L21/78 ; B23K26/53 ; H01L21/304 ; H01L21/67
Abstract:
There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.
Public/Granted literature
- US12194570B2 Laser processing method, semiconductor member manufacturing method, and laser processing device Public/Granted day:2025-01-14
Information query
IPC分类:
