Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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Application No.: US17546248Application Date: 2021-12-09
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Publication No.: US20220102485A1Publication Date: 2022-03-31
- Inventor: Hidefumi TAKAYA , Yuichi TAKEUCHI , Yukihiko WATANABE
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya-city
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya-city
- Priority: JP2019-126893 20190708
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/66

Abstract:
A semiconductor device includes a semiconductor substrate having an element region and a terminal region located around the element region. The terminal region includes multiple guard rings and multiple first diffusion regions. When the semiconductor substrate is viewed in a plan view, one of the first diffusion regions is arranged correspondingly to one of the guard rings, and each of the guard rings is located in corresponding one of the first diffusion regions. A width of each of the first diffusion regions is larger than a width of corresponding one of the guard rings.
Public/Granted literature
- US12205983B2 Semiconductor device and manufacturing method of semiconductor device Public/Granted day:2025-01-21
Information query
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