Invention Application
- Patent Title: TRANSISTORS INCLUDING TWO-DIMENSIONAL MATERIALS
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Application No.: US17032669Application Date: 2020-09-25
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Publication No.: US20220102495A1Publication Date: 2022-03-31
- Inventor: Kirby Kurtis Maxey , Ashish Verma Penumatcha , Carl Hugo Naylor , Chelsey Jane Dorow , Kevin P. O'Brien , Shriram Shivaraman , Tanay Arun Gosavi , Uygar E. Avci
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/24 ; H01L29/78 ; H01L29/66
Abstract:
Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.
Information query
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