Invention Application
- Patent Title: Tunnel Junction selector MRAM
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Application No.: US17562680Application Date: 2021-12-27
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Publication No.: US20220123050A1Publication Date: 2022-04-21
- Inventor: Mauricio Manfrini , Hon-Sum Philip Wong
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H01L43/02
Abstract:
A magnetoresistive random access memory (MRAM) cell includes a bottom electrode, a magnetic tunnel junction structure, a bipolar tunnel junction selector; and a top electrode. The tunnel junction selector includes a MgO tunnel barrier layer and provides a bipolar function for putting the MTJ structure in parallel or anti-parallel mode.
Public/Granted literature
- US11737284B2 Tunnel junction selector MRAM Public/Granted day:2023-08-22
Information query
IPC分类:
