A package for a power semiconductor device includes a housing, a power semiconductor module disposed within the housing, first and second fluidic channels extending through the housing on opposite sides of the power semiconductor module, and first and second arrays of heat transfer elements respectively disposed within the first and second fluidic channels. The first and second arrays of heat transfer elements are respectively physically bonded to first and second major surfaces of the power semiconductor module. A method of manufacturing a package for a power semiconductor device includes (i) respectively bonding first and second arrays of heat transfer elements to first and second major surfaces of a power semiconductor module, (ii) encapsulating the heat transfer elements within a sacrificial material, (iii) forming a housing around the sacrificial material and the heat transfer elements, and (iv) removing the sacrificial material from the housing to form first and second fluidic channels.