- 专利标题: METHOD FOR CLONAL-GROWTH OF SINGLE-CRYSTAL METAL
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申请号: US17433756申请日: 2019-06-04
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公开(公告)号: US20220136134A1公开(公告)日: 2022-05-05
- 发明人: Kaihui Liu , Zhibin Zhang , Muhong Wu , Dapeng Yu , Enge Wang
- 申请人: PEKING UNIVERSITY
- 申请人地址: CN Beijing
- 专利权人: PEKING UNIVERSITY
- 当前专利权人: PEKING UNIVERSITY
- 当前专利权人地址: CN Beijing
- 优先权: CN201910144704.9 20190227
- 国际申请: PCT/CN2019/089912 WO 20190604
- 主分类号: C30B29/02
- IPC分类号: C30B29/02 ; C30B29/64 ; C30B1/02
摘要:
A method for clonal-growth of a single-crystal metal, including: using copper as an example, placing an existing small-sized single-crystal copper foil with a plane of any index on a copper foil that needs to be single-crystallized, and performing annealing to obtain, by cloning, a large-area (in meters) single-crystal copper foil with the same surface index as that of the parent facet. The method solves the difficult problem of large-area single-crystal copper foil preparation. By performing annealing, a parent single-crystal copper foil with a very small size (˜0.25 cm2) can be cloned to produce a large-area (˜700 cm2) single-crystal copper foil, which is an increase in area of about 3000 times.
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