公开(公告)号：US20220136134A1

公开(公告)日：2022-05-05

申请号：US17433756

申请日：2019-06-04

申请人： PEKING UNIVERSITY

发明人： Kaihui Liu ,  Zhibin Zhang ,  Muhong Wu ,  Dapeng Yu ,  Enge Wang

IPC分类号： C30B29/02 ,  C30B29/64 ,  C30B1/02

摘要： A method for clonal-growth of a single-crystal metal, including: using copper as an example, placing an existing small-sized single-crystal copper foil with a plane of any index on a copper foil that needs to be single-crystallized, and performing annealing to obtain, by cloning, a large-area (in meters) single-crystal copper foil with the same surface index as that of the parent facet. The method solves the difficult problem of large-area single-crystal copper foil preparation. By performing annealing, a parent single-crystal copper foil with a very small size (˜0.25 cm2) can be cloned to produce a large-area (˜700 cm2) single-crystal copper foil, which is an increase in area of about 3000 times.