Invention Application
- Patent Title: INTEGRATED CIRCUIT CHIP HAVING BS-PDN STRUCTURE
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Application No.: US17228111Application Date: 2021-04-12
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Publication No.: US20220139863A1Publication Date: 2022-05-05
- Inventor: Eunseok Song , Hongjoo Baek , Kyungsuk Oh , Manho Lee , Hyuekjae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0145241 20201103
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528 ; H01L23/48 ; H01L23/31

Abstract:
An integrated circuit chip includes a substrate having an active surface and a back surface opposite to the active surface; a front-end-of-line (FEOL) structure disposed on the active surface of the substrate; a first back-end-of-line (BEOL) structure disposed on the FEOL structure; an intermediate connection layer disposed under the back surface of the substrate, the intermediate connection layer including a charge storage, and metal posts disposed around the charge storage; and a re-distribution structure layer disposed under the intermediate connection layer.
Public/Granted literature
- US11984421B2 Integrated circuit chip having BS-PDN structure Public/Granted day:2024-05-14
Information query
IPC分类: