Invention Application
- Patent Title: ETCHING METHOD
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Application No.: US17517723Application Date: 2021-11-03
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Publication No.: US20220148884A1Publication Date: 2022-05-12
- Inventor: Takatoshi ORUI , Ryutaro SUDA , Maju TOMURA , Yoshihide KIHARA
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2020-188671 20201112
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01J37/32

Abstract:
An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.
Public/Granted literature
- US12198938B2 Etching method Public/Granted day:2025-01-14
Information query
IPC分类: