Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17362903Application Date: 2021-06-29
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Publication No.: US20220149060A1Publication Date: 2022-05-12
- Inventor: JAERYONG SIM , Giyong Chung , Dongsik Oh , Jeehoon Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0150749 20201112
- Main IPC: H01L27/11529
- IPC: H01L27/11529 ; H01L27/11519 ; H01L27/11524 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L29/423 ; H01L21/28

Abstract:
A semiconductor device includes a substrate that includes a first active region, a second active region, and an isolation region. An isolation layer pattern fills a trench in the substrate. A first gate insulation layer pattern and a first gate, electrode structure are formed on the first active region. A second gate insulation layer pattern and second gate electrode structure are formed on the second active region. The first gate electrode structure includes a first polysilicon pattern, a second polysilicon pattern, and a first metal pattern. The second gate electrode structure includes a third polysilicon pattern, a fourth polysilicon pattern, and a second metal pattern. An upper surface of the isolation layer pattern is higher than upper surfaces of each of the first and third polysilicon patterns. A sidewall of each of the first and third polysilicon patterns contacts sidewalls of the isolation layer pattern.
Public/Granted literature
- US11844214B2 Semiconductor device and method of manufacturing the same Public/Granted day:2023-12-12
Information query
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