Invention Application
- Patent Title: SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, AND AN ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
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Application No.: US17585645Application Date: 2022-01-27
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Publication No.: US20220149205A1Publication Date: 2022-05-12
- Inventor: Yasuharu HOSAKA , Yukinori SHIMA , Masataka NAKADA , Masami JINTYOU
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2015-227617 20151120,JP2015-237207 20151204
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/04
Abstract:
In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
Public/Granted literature
Information query
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