公开(公告)号：US20240429287A1

公开(公告)日：2024-12-26

申请号：US18825421

申请日：2024-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20240272735A1

公开(公告)日：2024-08-15

申请号：US18627619

申请日：2024-04-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US20230387217A1

公开(公告)日：2023-11-30

申请号：US18228134

申请日：2023-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/24 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/4908 ,  H01L29/0692 ,  H01L29/1037 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20220181492A1

公开(公告)日：2022-06-09

申请号：US17533588

申请日：2021-11-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66

Abstract: A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.

公开(公告)号：US20220013545A1

公开(公告)日：2022-01-13

申请号：US17482492

申请日：2021-09-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H01L29/49 ,  H01L49/02 ,  G02F1/1362

Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

公开(公告)号：US20210005754A1

公开(公告)日：2021-01-07

申请号：US17026442

申请日：2020-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/04 ,  H01L29/66

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20200373433A1

公开(公告)日：2020-11-26

申请号：US16645522

申请日：2018-10-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Toshikatsu KUNII ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device is configured to include a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and a semiconductor layer. The semiconductor layer is positioned over the first insulating layer. The first conductive layer is positioned over the semiconductor layer. The second insulating layer covers a side surface and a bottom surface of the first conductive layer. The third insulating layer is in contact with a top surface of the first insulating layer and part of a top surface of the semiconductor layer and covers a side surface of the second insulating layer. The semiconductor layer contains a metal oxide, the first insulating layer and the second insulating layer each contain an oxide, and the third insulating layer contains a metal nitride.

公开(公告)号：US20200295057A1

公开(公告)日：2020-09-17

申请号：US16884241

申请日：2020-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Satoru IDOJIRI ,  Kenichi OKAZAKI ,  Hiroki ADACHI ,  Daisuke KUBOTA

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20200185233A1

公开(公告)日：2020-06-11

申请号：US16787110

申请日：2020-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/04 ,  H01L21/4757 ,  H01L21/443 ,  H01L21/44

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20190355591A1

公开(公告)日：2019-11-21

申请号：US16524733

申请日：2019-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC: H01L21/477 ,  H01L21/28 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.