Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS
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Application No.: US16957033Application Date: 2019-07-29
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Publication No.: US20220157576A1Publication Date: 2022-05-19
- Inventor: Taku Iwase , Masakazu Isozaki , Kenetsu Yokogawa , Masahito Mori , Junichi Sayama
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Minato-ku, Tokyo
- International Application: PCT/JP2019/029630 WO 20190729
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.
Information query