公开(公告)号：US20220319809A1

公开(公告)日：2022-10-06

申请号：US17273838

申请日：2019-12-23

Applicant: Hitachi High-Tech Corporation

Inventor： Taku Iwase ,  Naoyuki Kofuji ,  Yasushi Sonoda ,  Yusuke Nakatani ,  Motohiro Tanaka

IPC: H01J37/32

Abstract: An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber. For this purpose, the invention includes: a processing chamber in which a sample is subjected to plasma processing; a radio frequency power source configured to supply radio frequency power for generating plasma through a first member of a dielectric material disposed above the processing chamber; a magnetic field forming mechanism configured to form a magnetic field inside the processing chamber; a sample stage where the sample is placed; and a second member disposed between the first member and the sample stage and having a through hole formed therein, in which the through hole is formed at a position where a distance thereof from a center of the second member is a predetermined distance or more, and a distance from the first member to the second member is a distance such that a density of plasma generated between the first member and the second member is a cutoff density or higher.

公开(公告)号：US11532484B2

公开(公告)日：2022-12-20

申请号：US16482106

申请日：2018-10-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Taku Iwase ,  Takao Arase ,  Satoshi Terakura ,  Hayato Watanabe ,  Masahito Mori

IPC: H01L21/3213 ,  H01L21/311 ,  H01L27/11556 ,  H01L27/11582

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

公开(公告)号：USD1008986S1

公开(公告)日：2023-12-26

申请号：US29789929

申请日：2021-10-25

Applicant: Hitachi High-Tech Corporation

Designer： Yusuke Nakatani ,  Kazuumi Tanaka ,  Masahiro Yamaoka ,  Yasushi Sonoda ,  Taku Iwase

Abstract: FIG. 1 is a front, top, and right side perspective view of an ion shield plate for plasma processing apparatus according to the design;
FIG. 2 is a front view thereof;
FIG. 3 is a top plan view thereof;
FIG. 4 is a bottom plan view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a left side view thereof;
FIG. 7 is a rear view thereof;
FIG. 8 is a cross-sectional view taken along line 8-8 of FIG. 2; and,
FIG. 9 is an enlarged view of the portion shown in box, labeled, “FIG. 9,” in FIG. 8.
The dot-dash line box shown in FIG. 8 defines the enlarged portion view shown in FIG. 9 and forms no part of the claimed design.

公开(公告)号：USD891636S1

公开(公告)日：2020-07-28

申请号：US29688724

申请日：2019-04-24

Applicant: Hitachi High-Tech Corporation

Designer： Masakazu Isozaki ,  Masahito Mori ,  Kenetsu Yokogawa ,  Takao Arase ,  Taku Iwase

公开(公告)号：US20240096599A1

公开(公告)日：2024-03-21

申请号：US17641538

申请日：2021-02-08

Applicant: Hitachi High-Tech Corporation

Inventor： Koichi Takasaki ,  Taku Iwase

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32651 ,  H01J37/3266 ,  H01J37/32715 ,  H01J2237/3345

Abstract: In order to execute stable processing by suppressing plasma diffusion and non-stationary discharge generation, there is provided a plasma processing device which includes a processing chamber in which a sample stage is provided for placing a sample thereon, an exhaust unit for evacuating the processing chamber, a magnetic field forming mechanism for forming a magnetic field in the processing chamber, and a power supply unit that supplies radio frequency power for generating plasma to the inside of the processing chamber evacuated by the exhaust unit and has the magnetic field formed by the magnetic field forming mechanism. The processing chamber includes a shielding section which divides an inner part of the processing chamber into a first area at a side for supplying the radio frequency power from the power supply unit and a second area at a side where the sample stage is disposed. The shielding section includes a first shielding plate disposed at the side that faces the first area, in which a first opening is formed, a second shielding plate disposed at the side that faces the second area, in which a second opening is formed at the center, and a third shielding plate disposed between the first and the second shielding plates.

公开(公告)号：US20220157576A1

公开(公告)日：2022-05-19

申请号：US16957033

申请日：2019-07-29

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Taku Iwase ,  Masakazu Isozaki ,  Kenetsu Yokogawa ,  Masahito Mori ,  Junichi Sayama

IPC: H01J37/32

Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.