Invention Application
- Patent Title: FILM FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FILM FORMING DEVICE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17594029Application Date: 2020-03-26
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Publication No.: US20220157600A1Publication Date: 2022-05-19
- Inventor: Hiroaki ASHIZAWA , Hideo NAKAMURA , Yosuke SERIZAWA , Yoshikazu IDENO
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Minato-ku, Tokyo
- Priority: JP2019-075480 20190411
- International Application: PCT/JP2020/013597 WO 20200326
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/44 ; C23C16/34 ; C23C16/46 ; C23C16/458 ; C23C16/52 ; C23C16/455
Abstract:
A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.
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Information query
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