Invention Application
- Patent Title: Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
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Application No.: US17590266Application Date: 2022-02-01
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Publication No.: US20220157844A1Publication Date: 2022-05-19
- Inventor: M. Jared Barclay , Merri L. Carlson , Saurabh Keshav , George Matamis , Young Joon Moon , Kunal R. Parekh , Paolo Tessariol , Vinayak Shamanna
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11519 ; H01L21/311 ; H01L27/11582 ; H01L27/11565
Abstract:
A method used in forming a memory array comprising strings of memory cells comprises forming a construction comprising a stack that have vertically-alternating insulative tiers and wordline tiers. An array of openings is formed in an uppermost portion of upper material that is above the stack, and the openings comprise channel openings and dummy openings. At least the uppermost portion of the upper material is used as a mask while etching the channel openings and the dummy openings into a lower portion of the upper material. The channel openings are etched into the insulative and wordline tiers. The channel openings are etched deeper into the construction than the dummy openings, and channel material is formed in the channel openings after the etching. Structures independent of method are disclosed.
Public/Granted literature
Information query
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