Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17436136Application Date: 2020-03-18
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Publication No.: US20220157986A1Publication Date: 2022-05-19
- Inventor: Shunpei YAMAZAKI , Shinya SASAGAWA , Shunichi ITO , Erika TAKAHASHI , Tetsuya KAKEHATA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP2019-066875 20190329
- International Application: PCT/IB2020/052441 WO 20200318
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/108
Abstract:
A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.
Public/Granted literature
- US12057508B2 Semiconductor device and method for manufacturing semiconductor device Public/Granted day:2024-08-06
Information query
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