公开(公告)号：US20230268348A1

公开(公告)日：2023-08-24

申请号：US18113188

申请日：2023-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G09G3/20 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L27/1248 ,  G09G3/20 ,  H01L29/78693 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20140273343A1

公开(公告)日：2014-09-18

申请号：US14287494

申请日：2014-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Miyuki HOSOBA ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Taiga MURAOKA

IPC: H01L29/66

CPC classification number: H01L29/66969 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/7869

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.

Abstract translation: 目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。 在制造包括通道蚀刻反交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜 光透过该掩模以具有多个强度。 在蚀刻步骤中，通过使用蚀刻气体的干蚀刻进行第一蚀刻步骤，并且通过使用蚀刻剂的湿蚀刻进行第二蚀刻步骤。

公开(公告)号：US20240030429A1

公开(公告)日：2024-01-25

申请号：US18251776

申请日：2021-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Shunichi ITO ,  Shiori SAGA ,  Yohei MOMMA ,  Jo SAITO ,  Kunihiko SUZUKI ,  Teppei OGUNI ,  Yuji IWAKI ,  Kanta ABE

IPC: H01M4/525 ,  H01M4/46 ,  H01M10/0525

CPC classification number: H01M4/525 ,  H01M4/463 ,  H01M4/466 ,  H01M10/0525 ,  H01M2004/028

Abstract: A positive electrode active material in which the number of defects that cause deterioration is small or progress of the defect is suppressed is provided. The positive electrode active material is used for a secondary battery. The positive electrode active material contains lithium cobalt oxide containing an additive element. After a cycle test is performed on a cell that uses the positive electrode active material for a positive electrode and a lithium electrode as a counter electrode, the positive electrode active material includes a defect and contains at least the same element as the additive element in a region in the vicinity of the defect. The additive element is contained also in a surface portion of the positive electrode active material.

公开(公告)号：US20230298906A1

公开(公告)日：2023-09-21

申请号：US18021317

申请日：2021-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Shunichi ITO ,  Shinobu KAWAGUCHI ,  Masahiro TAKAHASHI

IPC: H01L21/477

CPC classification number: H01L21/477

Abstract: A semiconductor device with small variation in characteristics and high reliability is provided. In a method for manufacturing the semiconductor device, an oxide is formed, a first insulator is formed over the oxide, a conductor is formed over the first insulator, a second insulator is formed over the conductor, and heat treatment is performed so that hydrogen in the oxide and the first insulator is moved into and absorbed by the second insulator. The second insulator is formed by a sputtering method.

公开(公告)号：US20220157986A1

公开(公告)日：2022-05-19

申请号：US17436136

申请日：2020-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L27/108

Abstract: A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

公开(公告)号：US20220157817A1

公开(公告)日：2022-05-19

申请号：US17439500

申请日：2020-03-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with less variations in transistor characteristics is provided. A first insulator, first and second oxide films, a first conductive film, a first insulating film, and a second conductive film are deposited and processed to form a first and second oxides, a first conductive layer, a first insulating layer, and a second conductive layer. In the process, a layer is formed to cover the first and second oxides, the first conductive layer, the first insulating layer, and the second conductive layer. The second conductive layer and the layer are removed. A second insulating layer in contact with side surfaces of the first and second oxides, the first conductive layer, and the first insulating layer is formed, and a second insulator is formed thereover. An opening reaching the second oxide is formed in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator.

公开(公告)号：US20220320339A1

公开(公告)日：2022-10-06

申请号：US17615859

申请日：2020-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Hiromi SAWAI ,  Ryosuke WATANABE ,  Shinobu KAWAGUCHI ,  Shunichi ITO

IPC: H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

公开(公告)号：US20210225889A1

公开(公告)日：2021-07-22

申请号：US17223276

申请日：2021-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G09G3/20 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20170213855A1

公开(公告)日：2017-07-27

申请号：US15480560

申请日：2017-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  G09G3/20 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20140179058A1

公开(公告)日：2014-06-26

申请号：US14191853

申请日：2014-02-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Taiga MURAOKA ,  Shunichi ITO ,  Miyuki HOSOBA

IPC: H01L29/66

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/7869

Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used.

Abstract translation: 本发明的目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。在包括通道蚀刻的半导体器件的制造方法中 倒置交错薄膜晶体管，氧化物半导体膜和导电膜使用掩模层进行蚀刻，该掩模层使用作为透光的多色调掩模形成，该透光掩模通过该曝光掩模透射，以便具有多个 强度 在蚀刻步骤中，通过使用蚀刻剂的湿式蚀刻进行第一蚀刻步骤，并且通过使用蚀刻气体的干法蚀刻进行第二蚀刻步骤。