公开(公告)号：US20250081629A1

公开(公告)日：2025-03-06

申请号：US18818925

申请日：2024-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Motomu KURATA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L21/02

Abstract: A semiconductor device that operates at high speed is provided. The semiconductor device is fabricated in the following manner: a first coating film over a first insulator and a second coating film over the first coating film are formed; a first layer is formed by partly removing the second coating film; a second layer is formed by partly removing the first coating film using the first layer as a mask; heat treatment is performed; a first oxide semiconductor is formed to cover a top surface of the first insulator, a side surface of the second layer, and a side surface and a top surface of the first layer; a second oxide semiconductor is formed in contact with the side surface of the second layer by processing the first oxide semiconductor by anisotropic etching; the first layer is removed; and a side surface of the second oxide semiconductor that is covered with the second layer is exposed by removing the second layer.

公开(公告)号：US20240381687A1

公开(公告)日：2024-11-14

申请号：US18692944

申请日：2022-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu OHSAWA ,  Toshiki SASAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K50/17 ,  H10K50/13 ,  H10K50/16 ,  H10K50/19 ,  H10K59/122 ,  H10K59/35 ,  H10K59/80 ,  H10K85/60 ,  H10K101/20 ,  H10K101/30

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode, a common electrode, and a first intermediate layer. The first intermediate layer includes a first inorganic compound and a first organic compound. The first organic compound has an unshared electron pair. The first organic compound interacts with the first inorganic compound to form a singly occupied molecular orbital. The second light-emitting device includes a second pixel electrode, the common electrode, and a second intermediate layer. The second intermediate layer includes the first inorganic compound and the first organic compound. The first insulating layer covers a side surface and part of a top surface of the first intermediate layer and a side surface and part of a top surface of the second intermediate layer. The second insulating layer overlaps with the side surface and the part of the top surface of the first intermediate layer and the side surface and the part of the top surface of the second intermediate layer with the first insulating layer therebetween.

公开(公告)号：US20240292669A1

公开(公告)日：2024-08-29

申请号：US18569769

申请日：2022-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A display apparatus having high display quality is provided. The display apparatus includes a first pixel, a second pixel, a first insulating layer, and a second insulating layer over the first insulating layer; the first pixel includes a first pixel electrode, a first EL layer covering the first pixel electrode, a third insulating layer over the first EL layer, and a common electrode over the first EL layer and the third insulating layer; the second pixel includes a second pixel electrode, a second EL layer covering the second pixel electrode, a fourth insulating layer over the second EL layer, and the common electrode over the second EL layer and the fourth insulating layer; the first insulating layer and the third insulating layer each include a first protruding portion over the first pixel electrode; the first protruding portion is positioned outward from an end portion of the second insulating layer; the first insulating layer and the fourth insulating layer each include a second protruding portion over the second pixel electrode; the second protruding portion is positioned outward from an end portion of the second insulating layer; a side surface of the first protruding portion and a side surface of the second protruding portion each have a tapered shape in a cross-sectional view of the display apparatus.

公开(公告)号：US20240274696A1

公开(公告)日：2024-08-15

申请号：US18606052

申请日：2024-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78696

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20240237425A9

公开(公告)日：2024-07-11

申请号：US18548186

申请日：2022-02-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/35

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/353

Abstract: A high-definition and high-resolution display apparatus is provided. A conductive film, a first layer, and a first sacrificial layer are formed. The first layer and the first sacrificial layer are processed to expose part of the conductive film. A second layer and a second sacrificial layer are formed over the first sacrificial layer and the conductive film. The second layer and the second sacrificial layer are processed to expose part of the conductive film. The conductive film is processed to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer. Two insulating films covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and atop surface of the second sacrificial layer are formed. The two insulating films are processed to form a sidewall covering at least the side surface of the first pixel electrode and the side surface of the first layer. The first sacrificial layer and the second sacrificial layer are removed. A common electrode is formed over the first layer and the second layer.

公开(公告)号：US20240122052A1

公开(公告)日：2024-04-11

申请号：US18267873

申请日：2021-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Ryota HODO ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC: H10K59/90 ,  H10K59/12 ,  H10K59/80 ,  H10K71/60

CPC classification number: H10K59/90 ,  H10K59/1201 ,  H10K59/873 ,  H10K71/60 ,  H10K59/35

Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a first light-emitting device, a second light-emitting device, a partition, a first protective layer, and a second protective layer. The first light-emitting device includes a first electrode, a second electrode, and a first layer, and the first layer is interposed between the electrodes. The first layer includes a first material having a hole-transport property and a first substance having an electron-accepting property, and the first protective layer is in contact with the second electrode. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer, and the second layer is interposed between the electrodes. The second layer includes the first material having a hole-transport property and the first substance having an electron-accepting property, and the second layer includes a first gap between the second layer and the first layer. The second protective layer includes a second gap between the second protective layer and the first protective layer. The second gap overlaps with the first gap, and the second protective layer is in contact with the fourth electrode. The partition overlaps with the first gap and the second gap.

公开(公告)号：US20230027402A1

公开(公告)日：2023-01-26

申请号：US17787982

申请日：2020-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Tomoaki MORIWAKA

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/8239

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes a first insulator; a second insulator having an opening over the first insulator; a third insulator that has a first depressed portion and is provided inside the opening; a first oxide that has a second depressed portion and is provided inside the first depressed portion; a second oxide provided inside the second depressed portion; a first conductor and a second conductor that are electrically connected to the second oxide and are apart from each other; a fourth insulator over the second oxide; and a third conductor including a region overlapping with the second oxide with the fourth insulator therebetween. The second oxide includes a first region, a second region, and a third region sandwiched between the first region and the second region in a top view. The first conductor includes a region overlapping with the first region and the second insulator. The second conductor includes a region overlapping with the second region and the second insulator. The third conductor includes a region overlapping with the third region.

公开(公告)号：US20220199831A1

公开(公告)日：2022-06-23

申请号：US17591690

申请日：2022-02-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinobu ASAMI ,  Yutaka OKAZAKI ,  Satoru OKAMOTO ,  Shinya SASAGAWA

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

公开(公告)号：US20220077322A1

公开(公告)日：2022-03-10

申请号：US17428753

申请日：2020-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66

Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

公开(公告)号：US20210408298A1

公开(公告)日：2021-12-30

申请号：US17295693

申请日：2019-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Hideomi SUZAWA ,  Shinya SASAGAWA

IPC: H01L29/786

Abstract: A semiconductor device with high reliability is provided. A first conductor and a second conductor are provided over and in contact with a first oxide. A first insulator is provided to cover the first oxide, a first conductor, and a second conductor. The first insulator includes an opening portion. The first oxide is exposed on a bottom surface of the opening portion. A side surface of the first conductor and a side surface of the second conductor are exposed on a side surface of the opening portion. A second oxide is provided in contact with the first oxide, the side surface of the first conductor, and the second conductor in the opening portion. A second insulator is provided in the opening portion with the second oxide therebetween. A third conductor is provided in the opening portion with the second insulator therebetween. Lower end portions of the side surface of the first conductor and the second conductor touch an ellipse or a circle with a center above the first oxide.