- 专利标题: QUANTUM DOT DEVICES WITH BACK GATES
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申请号: US17592724申请日: 2022-02-04
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公开(公告)号: US20220158069A1公开(公告)日: 2022-05-19
- 发明人: Jeanette M. Roberts , Ravi Pillarisetty , David J. Michalak , Zachary R. Yoscovits , James S. Clarke , Van H. Le
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L39/22
- IPC分类号: H01L39/22 ; G06N10/00 ; H01L39/02 ; H01L39/24
摘要:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.
公开/授权文献
- US11700776B2 Quantum dot devices with fins 公开/授权日:2023-07-11
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