Invention Application
- Patent Title: METHOD FOR LCOS DBR MULTILAYER STACK PROTECTION VIA SACRIFICIAL HARDMASK FOR RIE AND CMP PROCESSES
-
Application No.: US17100422Application Date: 2020-11-20
-
Publication No.: US20220163846A1Publication Date: 2022-05-26
- Inventor: Lan Yu , Benjamin D. Briggs , Tyler Sherwood , Raghav Sreenivasan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; H01L21/768 ; G02F1/1362 ; H01L23/522

Abstract:
Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.
Public/Granted literature
- US11573452B2 Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes Public/Granted day:2023-02-07
Information query
IPC分类: