Invention Application
- Patent Title: HEAD OF LINE ENTRY PROCESSING IN A BUFFER MEMORY DEVICE
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Application No.: US17315191Application Date: 2021-05-07
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Publication No.: US20220164300A1Publication Date: 2022-05-26
- Inventor: Chun-Chu Chen-Jhy Archie WU , Fnu VIKRAM SINGH , Syed KAISER
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F12/02

Abstract:
A method of a buffer memory device, a storage system, and a buffer memory device are provided. The method of the buffer memory device, the buffer memory device having a lower tier memory and a higher tier memory, may include receiving a new entry request, determining that the new entry request includes an HOL entry, selecting an entry on the higher tier memory to be tiered down to the lower tier memory in response to determining that the new entry request includes an HOL entry, removing the selected entry from the higher tier memory, storing the HOL entry in the higher tier memory of the buffer memory device, and outputting the HOL entry to an arbiter.
Public/Granted literature
- US11586564B2 Head of line entry processing in a buffer memory device Public/Granted day:2023-02-21
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