Invention Application
- Patent Title: TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
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Application No.: US17110811Application Date: 2020-12-03
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Publication No.: US20220181466A1Publication Date: 2022-06-09
- Inventor: Nicholas Stephen Dellas , Dong Seup Lee , Andinet Tefera Desalegn
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L29/205 ; H01L29/207 ; H01L29/06

Abstract:
In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.
Public/Granted literature
- US11508830B2 Transistor with buffer structure having carbon doped profile Public/Granted day:2022-11-22
Information query
IPC分类: