公开(公告)号：US11508830B2

公开(公告)日：2022-11-22

申请号：US17110811

申请日：2020-12-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06 ,  H01L29/20

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.

公开(公告)号：US20220181466A1

公开(公告)日：2022-06-09

申请号：US17110811

申请日：2020-12-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.

公开(公告)号：US20230068191A1

公开(公告)日：2023-03-02

申请号：US18048167

申请日：2022-10-20

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.