- 专利标题： MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR
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申请号： US17440784申请日： 2020-04-01
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公开(公告)号： US20220185660A1公开(公告)日： 2022-06-16
- 发明人: Wan Chia Ang , Piotr Kropelnicki , Ilker Ender Ocak
- 申请人： Meridian Innovation Pte Ltd
- 申请人地址： SG Singapore
- 专利权人： Meridian Innovation Pte Ltd
- 当前专利权人： Meridian Innovation Pte Ltd
- 当前专利权人地址： SG Singapore
- 国际申请： PCT/SG2020/050201 WO 20200401
- 主分类号： B81C1/00
- IPC分类号： B81C1/00 ; G01J5/02 ; G01J5/12
摘要：
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
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