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    Method for manufacturing a thermoelectric-based infrared detector having a MEMS structure above a hybrid component
    2.
    发明授权
    Method for manufacturing a thermoelectric-based infrared detector having a MEMS structure above a hybrid component 有权

    公开(公告)号：US10937824B2

    公开(公告)日：2021-03-02

    申请号：US16224782

    申请日：2018-12-18

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L27/146 ,  G01J5/12 ,  G01J5/04 ,  B81C1/00 ,  G01J5/02 ,  B81B7/02 ,  G01J5/20

    Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

    Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
    3.
    发明授权
    Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines 有权

    公开(公告)号：US10199424B1

    公开(公告)日：2019-02-05

    申请号：US15653558

    申请日：2017-07-19

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L27/146 ,  G01J5/02 ,  G01J5/12 ,  G01J5/20

    Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

    Scalable thermoelectric-based infrared detector
    6.
    发明授权
    Scalable thermoelectric-based infrared detector 有权

    公开(公告)号：US10403674B2

    公开(公告)日：2019-09-03

    申请号：US15647284

    申请日：2017-07-12

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

    IPC: H01L23/62 ,  H01L27/146 ,  G01J5/04 ,  B81C1/00 ,  G01J5/02 ,  G01J5/12 ,  G01J5/08 ,  G01J5/16 ,  H01L31/0224 ,  H01L31/09

    Abstract: Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.

    HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS
    10.
    发明申请
    HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS 有权

    公开(公告)号：US20220162062A1

    公开(公告)日：2022-05-26

    申请号：US17440175

    申请日：2020-04-01

    Applicant: Meridian Innovation Pte Ltd

    Inventor： Wan Chia Ang ,  Piotr Kropelnicki ,  Ilker Ender Ocak

    IPC: B81C1/00

    Abstract: A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.

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