Invention Application
- Patent Title: METHOD OF FORMING STRUCTURES FOR THRESHOLD VOLTAGE CONTROL
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Application No.: US17546186Application Date: 2021-12-09
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Publication No.: US20220189775A1Publication Date: 2022-06-16
- Inventor: Maart van Druenen , Charles Dezelah , Qi Xie , Petro Deminskyi , Giuseppe Alessio Verni , Ren-Jie Chang , Lifu Chen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/40 ; H01L29/49 ; C23C16/32
Abstract:
Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.
Public/Granted literature
- US12159788B2 Method of forming structures for threshold voltage control Public/Granted day:2024-12-03
Information query
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