Invention Application
- Patent Title: HEAT DISSIPATING SUBSTRATE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR INTEGRATED DEVICE INCLUDING THE SAME
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Application No.: US17518511Application Date: 2021-11-03
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Publication No.: US20220189845A1Publication Date: 2022-06-16
- Inventor: Hyung Seok Lee , Sung-Bum Bae
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2020-0174167 20201214,KR10-2021-0036125 20210319
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/367 ; H01L21/48

Abstract:
Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.
Public/Granted literature
- US12191227B2 Heat dissipating substrate comprising diamond and semiconductor integrated device including the same Public/Granted day:2025-01-07
Information query
IPC分类: