公开(公告)号：US09755027B2

公开(公告)日：2017-09-05

申请号：US15265647

申请日：2016-09-14

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyung Seok Lee ,  Ki Hwan Kim ,  Sang Choon Ko ,  Zin-Sig Kim ,  Jeho Na ,  Eun Soo Nam ,  Young Rak Park ,  Junbo Park ,  Chi hoon Jun ,  Dong Yun Jung

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/778 ,  H01L29/423 ,  H01L29/20 ,  H01L29/417

CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

摘要： Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

公开(公告)号：US09613884B2

公开(公告)日：2017-04-04

申请号：US14872868

申请日：2015-10-01

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Chi Hoon Jun ,  Jeho Na ,  Dong Yun Jung ,  Sang Choon Ko ,  Eun Soo Nam ,  Hyung Seok Lee

IPC分类号： H01L23/34 ,  H01L23/467

CPC分类号： H01L23/467

摘要： Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

公开(公告)号：US10784179B2

公开(公告)日：2020-09-22

申请号：US16839964

申请日：2020-04-03

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyung Seok Lee ,  Zin-Sig Kim ,  Sung-Bum Bae

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065 ,  H01L29/778 ,  H01L29/20 ,  H01L23/373

摘要： A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.

公开(公告)号：US20220189845A1

公开(公告)日：2022-06-16

申请号：US17518511

申请日：2021-11-03

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyung Seok Lee ,  Sung-Bum Bae

IPC分类号： H01L23/373 ,  H01L23/367 ,  H01L21/48

摘要： Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.

公开(公告)号：US10651107B2

公开(公告)日：2020-05-12

申请号：US16134286

申请日：2018-09-18

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyung Seok Lee ,  Zin-Sig Kim ,  Sung-Bum Bae

IPC分类号： H01L23/367 ,  H01L25/065 ,  H01L23/538 ,  H01L23/00 ,  H01L23/373 ,  H01L29/20 ,  H01L29/778

摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.

公开(公告)号：US10608102B2

公开(公告)日：2020-03-31

申请号：US16137235

申请日：2018-09-20

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hokyun Ahn ,  Min Jeong Shin ,  Jeong Jin Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hyung Seok Lee ,  Jong-Won Lim ,  Sungjae Chang ,  Hyunwook Jung ,  Kyu Jun Cho ,  Dong Min Kang ,  Dong-Young Kim ,  Seong-Il Kim ,  Sang-Heung Lee ,  Jongmin Lee ,  Hong Gu Ji

IPC分类号： H01L29/78 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423

摘要： Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

公开(公告)号：US10014401B2

公开(公告)日：2018-07-03

申请号：US15414156

申请日：2017-01-24

申请人： Electronics and Telecommunications Research Institute

发明人： Jeho Na ,  Hyung Seok Lee ,  Chi Hoon Jun ,  Sang Choon Ko ,  Myungjoon Kwack ,  Young Rak Park ,  Woojin Chang ,  Hyun-Gyu Jang ,  Dong Yun Jung

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L23/31 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L23/315 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3192 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66462 ,  H01L29/7786

摘要： A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

公开(公告)号：US09905654B2

公开(公告)日：2018-02-27

申请号：US15215414

申请日：2016-07-20

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong Yun Jung ,  Hyun Soo Lee ,  Sang Choon Ko ,  Minki Kim ,  Jeho Na ,  Eun Soo Nam ,  Young Rak Park ,  Junbo Park ,  Hyung Seok Lee ,  Hyun-Gyu Jang ,  Chi Hoon Jun

IPC分类号： H01L29/205 ,  H01L29/66 ,  H01L29/872 ,  H01L29/20

CPC分类号： H01L29/205 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/872

摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

公开(公告)号：US09313719B2

公开(公告)日：2016-04-12

申请号：US14603198

申请日：2015-01-22

申请人： Electronics and Telecommunications Research Institute

发明人： Cheol Ryu ,  Hyung Seok Lee ,  Jae Ho Lee ,  Seok Jin Yoon ,  Do Hyung Kim ,  Jin Suk Ma ,  Choong Bum Park

IPC分类号： H04W48/14 ,  H04W28/02 ,  H04W4/06 ,  H04H60/87 ,  H04L29/08

CPC分类号： H04W48/14 ,  H04L67/2838 ,  H04W4/06

摘要： An apparatus for providing information about an available service using a proxy server and a method thereof. The apparatus includes an available service checker, a database, an available service searcher, and an available service broadcaster. The apparatus may provide information through the proxy server regarding available services of a device that is not currently connected to a basic service set (BSS), thereby preventing generation of excessive amount of traffic.

摘要翻译： 一种使用代理服务器提供关于可用服务的信息的装置及其方法。 该装置包括可用服务检查器，数据库，可用服务搜索器和可用服务广播器。 该装置可以通过代理服务器提供关于当前未连接到基本服务集（BSS）的设备的可用服务的信息，从而防止产生过量的业务。